84. IMS2003 TU5B-7, 1140-1150, 95 GHz Metamorphic HEMT Power Amplifiers on GaAs, KatherineHerrick*, steven Lardizabal*, Phil Marsh*, Colin Whelan*, *Raytheon RF Components. http://www.ims2003.org/technical/session/TU-5B.htm |
Session ID TU-5B Date Tuesday, June 10, 2003 Time slot Room Session Title Millimeter-Wave Monilithic IC Technologies Session chair and co-chair Timothy T. Lee and H. Alfred Hung Session chair affil. and co-chair affil. Boeing Satellite Systems and Army Research Laboratory, Adelphi, MD Session description This session focuses on recent advances in millimeter-wave device and IC technologies with circuits ranging from Ka-band through 120 GHz. Innovative results of MMICs using GaAs P-HEMT, M-HEMT, InP HBT and SiGe devices are presented. Circuits include mixers, amplifiers, transmit/receive chipset, transimpedance amplifier and low-noise devices. Pr. ID# Time Title Authors Affiliation TU-5B-1 Low-Noise Performance Near BVCEO in a 200 GHz SiGe Technology at Different Collector Design Points David Greenberg*, Susan Sweeney*, Greg Freeman*, David Ahlgren* *IBM TU-5B-2 InP HBT Transimpedance Amplifier for 43 Gb/s Optical Link Applications Zbigniew Nosal*, Tom Broekaert* | |
|